产品概述
The IRF530NSPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silICon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
应用
产品信息
晶体管极性: N沟道 电流, Id 连续: 17A 漏源电压, Vds: 100V 在电阻RDS（上）: 0.09ohm 电压 @ Rds测量: 10V 阈值电压 Vgs: 4V 功耗 Pd: 79W 晶体管封装类型: TO-263 针脚数: 3引脚 工作温度最高值: 175°C 产品范围: - 汽车质量标准: - MSL: MSL 1 -无限制
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