FDP12N60NZ / FDPF12N60NZ
N-Channel UniFETTM II MOSFET?8?9
600 V, 12 A, 650 m?8?4
Features
? RDS(on) = 530 m?8?4 (Typ.) @ VGS = 10 V, ID = 6 A
? Low Gate Charge ( Typ. 26 nC)
? Low Crss ( Typ. 12 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
ApplICations
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor?’s high voltage
MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts

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传   真:O512-5O1112O9
工厂专线:1595O933O5O
贸易专线:13914994568
Q   Q:41086900
E-Mail:master@ksmcu.com