产品概述
The SI4435DY is a -30V P-channel PowerTrench? MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, whICh contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Low gate charge
High performance trench technology for extremely low RDS (on)
High power and current handling capability
应用
产品信息
晶体管极性: P沟道 电流, Id 连续: -8.8A 漏源电压, Vds: -30V 在电阻RDS（上）: 0.015ohm 电压 @ Rds测量: -10V 阈值电压 Vgs: -1.7V 功耗 Pd: 2.5W 晶体管封装类型: SOIC 针脚数: 8引脚 工作温度最高值: 175°C 产品范围: - 汽车质量标准: - MSL: MSL 1 -无限制
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以上是，SI4435DY原装正品现货热销，品牌:INFINEON 型号:SI4435DY的信息