Features

? Fast Read Access Time - 120 ns

? AutomatIC Page Write Operation

Internal Address and Data Latches for 128-Bytes

Internal Control Timer

? Fast Write Cycle Time

Page Write Cycle Time - 10 ms Maximum

1 to 128-Byte Page Write Operation

? Low Power Dissipation

80 mA Active Current

300 μA CMOS Standby Current

? Hardware and Software Data Protection

? DATA Polling for End of Write Detection 

? High Reliability CMOS Technology

Endurance: 10

4

 or 10

5

 Cycles

Data Retention: 10 Years

? Single 5V ± 10% Supply

? CMOS and TTL Compatible Inputs and Outputs

? JEDEC Approved Byte-Wide Pinout

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

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