场效应管

600V N-Channel Power MOSFET:FL2N60,台湾方晶科技品牌,FL2N60规格书资料,主要用于充电器、备用电源等.

特点：
·Die in 6" Wafer Form
·600V,2A*,N-Channel
·RDS(ON)=4.8Ω(MAX.)***
·100% Tested at Probe

应用:

Cell Photo Charger
Standby Power