HG12N60A4D Fairchild代理600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 深圳市亨力拓电子有限公司货源电话：0755-83293082 阮先生
HGTG12N60A4D Fairchild代理600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 大批量到货
HGTG12N60A4D Fairchild代理600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devICes combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Features
? >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
? 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
? Low Conduction Loss
? Temperature Compensating SABER? Model
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards