FGH0N3 Fairchild代理300V PT N-Channel IGBT, TO-247 Package FGH50N3全新现货 深圳市亨力拓电子有限公司货源电话：0755-83293082 阮先生
FGH50N3 Fairchild代理300V PT N-Channel IGBT, TO-247 Package 大批量到货
FGH50N3 Fairchild代理300V PT N-Channel IGBT, TO-247 Package
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching
devICe combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
Formerly Developmental Type TA49485
Features
?Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max
?Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200μJ
?SCWT (@ TJ
= 125°C). . . . . . . . . . . . . . . . . > 8μs
? 300V Switching SOA Capability
?Positive VCE(SAT) Temperature Coefficient above
50A