HGTG5N120BND Fairchild代理21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND 深圳市亨力拓电子有限公司货源电话：0755-83293082 阮先生
HGTG5N120BND Fairchild代理21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 大批量到货
HGTG5N120BND Fairchild代理21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are Non-
Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This devICe has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The Diode used is the development type TA49058
(Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49306.
Features
? 21A, 1200V, TC = 25oC
? 1200V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC
? Short Circuit Rating
? Low Conduction Loss
? Thermal Impedance SPICE Model
Temperature Compensating SABER? Model
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
