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NCV1117DT18RKG MOS(场效应管)

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NCV1117DT18RKG MOS(场效应管) 技术参数

NCV1117DT18RKG 功能描述:低压差稳压器 - LDO ANA 1A 1.8V LDO REG RoHS:否制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 NCV1117DT18RK 功能描述:低压差稳压器 - LDO 1.8V 1.0A LDO RoHS:否制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 NCV1117DT15RKG 功能描述:低压差稳压器 - LDO 1.5V 1.0A Automotive RoHS:否制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 NCV1117DT15RK 功能描述:低压差稳压器 - LDO 1.5V 1.0A Automotive RoHS:否制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 NCV1009ZG 功能描述:基准电压& 基准电流 2.5V Precision RoHS:否制造商:STMicroelectronics 产品:Voltage References 拓扑结构:Shunt References 参考类型:Programmable 输出电压:1.24 V to 18 V 初始准确度:0.25 % 平均温度系数（典型值）:100 PPM / C 串联 VREF - 输入电压（最大值）: 串联 VREF - 输入电压（最小值）: 分流电流（最大值）:60 mA 最大工作温度:+ 125 C 封装 / 箱体:SOT-23-3L 封装:Reel NCV1117DT50RKG NCV1117DTARK NCV1117DTARKG NCV1117ST12T3 NCV1117ST12T3G NCV1117ST15T3 NCV1117ST15T3G NCV1117ST18T3G NCV1117ST20T3 NCV1117ST20T3G NCV1117ST25T3 NCV1117ST25T3G NCV1117ST33T3 NCV1117ST33T3G NCV1117ST50T3G NCV1117STAT3 NCV1117STAT3G NCV1124DG